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Lateral solid phase epitaxy (L-SPE) in non-doped or in-situ B-doped amorphous- (a-) SiGe deposited on SiO2 patterned Si(100) wafers by in-situ postannealing in reduced pressure chemical vapor deposition system was investigated for possible heterojunction bipolar transistor (HBT) base link resistivity improvement. Using Si2H6 as Si precursor gas, an epitaxial and amorphous layer was grown on the mask...
The solid phase epitaxy (SPE) of undoped amorphous Si (a-Si) deposited on SiO 2 patterned Si(001) wafers by reduced pressure chemical vapor deposition (RPCVD) using a H 2 –Si 2 H 6 gas system was investigated. The SPE was performed by applying in-situ postannealing directly after deposition process. By transmission electron microscopy (TEM) and scanning electron microscopy,...
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