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On the way to integrate lattice mismatched semiconductors on Si(001) we studied the Ge/Si heterosystem with the aim of a misfit dislocation free deposition that offers the vision to integrate defect-free alternative semiconductor structures on Si. Periodic Ge nano-structures (dots and lines) were selectively grown by chemical vapor deposition on Si nano-islands on silicon on insulator substrate with...
The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge–Si system for different fields of application. It is found that SiO 2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze...
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