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Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well (QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier systems. A self-consistent 6-band method is used to calculate the band structure for InGaN QW structure. Carrier-photon...
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
We have observed blue and red Stark shifts of two excitonic transition peaks in multiple GaN/AlN asymmetric coupled quantum wells due to increases in electric fields originating from spatial separation of photogenerated electrons and holes.
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