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The ∼20% Id,sat improvement is demonstrated successfully on the Si and Ge n-FinFETs with the implement of D-SMT stressor for the first time, based on the optimization of dislocation angle and the understanding of crystal re-growth velocities along different surface planes and directions in Si and Ge. The mobility enhancement ratio with D-SMT stressor in Ge n-FinFET (37%) is found to be larger than...
0.95(K0.48Na0.52NbO3)-0.05(LiSbO3) (95KNN-5LS) thin films have been fabricated by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates. The K-rich in the target and the fabrication parameters on the properties of the films was investigated. The results show that good films can be obtained with the 0.95(K0.48Na0.52NbO3)-0.05(LiSbO3)-0.0228K2CO3 (95KNN-5LS-4.56K) target, and the surface roughness,...
Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
The possibility of using polymer or organic films for photovoltaic or electret devices has been investigated by many investigators(1–5). In general, the open-circuit photovoltage in photovoltaic devices is much smaller than the potential difference across the energy gap of the materials if the mechanism responsible for the photovoltaic effects is due either to Schottky barrier, or to p-n junction...
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