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The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg‐doped In1−xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In1−xGaxN with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates...
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