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The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. Hall effect measurements were carried out at temperatures from 1.8K to 262K and at a fixed magnetic field of 1T. A good consistency was found between the calculated and the experimental...
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