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Carbon–silicon–nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by a RF nitrogen plasma source. Up to about 30 at% nitrogen and up to 20 at% silicon were found in the hard amorphous thin films by RBS, XPS, and SNMS in dependence on the composition of the mixed graphite/Si3N4–PLD target. Due to incorporation of 10% Si3N4 to the PLD graphite...
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