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The properties of the photoexcited plasma in n-GaAs and its influence on micro-Raman spectra were studied on bevelled structures. The modes of the photoexcited free-carriers plasmon–LO–phonon (PLP) coupling have been detected in the surface depletion layer at room temperature in continuum wave (CW) mode. The strong modifications of the intensities of TO–phonon and LO–phonon modes were observed along...
Si δ-doped GaAs layers were studied by micro-Raman spectroscopy. The spectra were recorded along the bevelled structure using the light of Ar + -ion laser (514.5nm line) with high power density. The observed changes in the Raman spectra are discussed in the sense of coupling present between LO phonon and photoexcited electron-hole plasma and plasma of electrons arising from ionised Si atoms...
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