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A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm and 35 nm metamorphic high electron mobility transistors (mHEMTs). By applying the 35 nm gate-length process, a four-stage cascode amplifier circuit achieved a small-signal gain of 26 dB at 320 GHz and more than...
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized...
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic...
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