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The development of InP-based 4- and 8-channel IQ Mach-Zehnder modulator PICs as basic active building blocks in advanced hybrid terabit super-channel OFDM/Nyquist WDM transmitter components is reported for the first time.
We present for the first time 32 GBd QPSK of an InP-based IQ modulator with monolithically integrated laser and co-packaged SiGe driver. Power consumption is 1.1 W, which is well within the CFP4 module overall budget of 6 W.
High speed InP-based travelling wave electrode (TWE) Mach-Zehnder modulators are presented and their integration capabilities to fabricate next generations of compact and high capacity transmitter components by utilizing so-called “monolithic-on-hybrid” integration approaches are emphasized.
The state-of-the art of medium and large scale InP-based Mach-Zehnder modulator PIC development is reported with regard to commercial fabrication of advanced transmitter components.
Development and characterization of monolithic, flip-chip compatible 2×50 Gb/s twin-IQ DQPSK MZ modulator chips - capable for hybrid assembly onto planar optical boards of advanced Tbit-capacity transmitter modules - is reported for the first time.
The linewidth of an improved 40 GHz modelocked laser diode is investigated. The influence of its operation parameters on linewidth and the resulting performance in a 40Gband-DQPSK system is evaluated.
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