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This work investigates the etching characteristics of SiCOH low dielectric constant (low-k) films in the CHF 3 13.56MHz/2MHz dual-frequency capacitively couple plasma (CCP). The effect of low-frequency (LF) power on etching behavior is analyzed. The results show that the increase of LF power can leads to a transition of etching behavior from films deposition to etching. By Fourier transform...
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