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Nuclear spins in semiconductors are an ideal system for implementing quantum bits (qubits) for quantum computation because of an extremely long coherence time. Dynamic nuclear polarization (DNP) through hyperfine interaction with electron spins and control of nuclear spin states by nuclear magnetic resonance (NMR) in semiconductors provide basic technologies for implementing nuclear-spin based qubits...
A highly efficient spin-polarized electron source is a key element for spintronic devices. One Co-based Heusler alloy in particular, Co2MnSi (CMS), has attracted much interest [1-5] because of its theoretically predicted half-metallic nature and high Curie temperature of 985 K. To fully exploit the half-metallic character of CMS, the effect of defects associated with off-stoichiometry on its half-metallicity...
A Heusler alloy Co2MnSi (CMS) has been extensively studied as a promising spin source material [1,2] because of its theoretically predicted half-metallicity and high Currie temperature of 985 K. We recently demonstrated that the suppression of Co antisites at nominal Mn/Fe sites is critical to obtaining half-metallic quaternary Co2(Mn, Fe)Si (CMFS) [3] in a similar way as in ternary alloy CMS [1,4,5]...
This paper presents a novel low voltage LDMOS structure with low on-resistance based on 0.13 μm CMOS technology. 8 V/9 V Nch LDMOS have only 0.3 μm gate length when the maximum gate operating voltage is 5 V, while the gate length of 5 V CMOS is 0.6 μm to avoid the short channel effect. The obtained specific on-resistance are 1.8 mΩmm2 (8 V Nch LDMOS) and 5.9 mΩmm2 (8 V Pch LDMOS) respectively. Furthermore...
A 4-sides buttable CdTe-ASIC hybrid module suitable for use in an X-ray flat panel detector (FPD) has been developed by applying through silicon via (TSV) technology to the readout ASIC. The ASIC has 128 times 256 channels of charge integration type readout circuitry and an area of 12.9 mm times 25.7 mm. The CdTe sensor of 1 mm thickness, having the same area and pixel of 100 mum pitch, was fabricated...
This paper proposes an analysis method of negative ion by electrostatic atomization. In this method, electrostatic field equation is coupled with Navier-Stokes equation of a drop of water employing the moving particle semi-implicit (MPS) method and the finite element method (FEM). The validity of the method is clarified.
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