The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Negative‐SET behavior is observed in various cation‐based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative‐SET behavior is eliminated by inserting an impermeable graphene layer. The graphene‐based...
On page 10623, Q. Liu, M. Liu and co‐workers have demonstrated that the negative‐SET behavior, which can cause reset failure, is related to the conductive filament overgrowth phenomenon in cation‐based resistive switching memory. In addition, they propose an effective solution (inserting an ion/atom‐blocking layer, i.e. graphene) to eliminate the negative‐SET phenomenon fundamentally. The fabricated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.