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In this paper, the scalability of dual trench epitaxial diode as the selector for phase change memory (PCM) has been analyzed. The 4 F2 diode with active area of 0.002916µm2 has been fabricated using the standard 40nm complementary metal oxide semiconductor process. The ratio of disturbance current between neighboring bit-lines (BLs) to drive current remains at average 2.0%. By introducing boron implantation...
In this paper, the performance of Ge2Sb2Te5 (GST) and nitrogen doped Ge2Sb2Te5 (NGST) have been investigated based on standard 40nm complementary metal–oxide–semiconductor (CMOS) technology. It shows a larger margin (∼2 orders) between SET and RESET resistance distributions in NGST cells. TEM and nano scratch test were implemented to find out that NGST film shows good contact with substrate which...
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