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Existing methodology and stress conditions are ideal for process benchmarking but might not be sufficient under fierce competition between advanced technology development approaches. In this paper, the importance of timing delay characterization in both device and circuit level is demonstrated and emphasized. Due to the difficulties of having accurate aging model for product level simulation during...
Conventional time consuming methodology and idealistic stress conditions are no longer satisfactory under fierce competition between advanced technology development approaches. In this paper, the effectiveness of test arrays with simple built-in self-test (BIST) design in FinFET high-k/metal gate (HK/MG) technology have been demonstrated through three experiments performed early in the process development...
Monotonous increase of saturation drain current Idsat but linear-region drain current Idlin reduction during hot carrier injection (HCI) stress is observed in N-type Lateral Diffused MOSFET. But the phenomenon of Idsat increase is contrary to what we typically observed during HCI stress. The increase of Idsat has been attributed to the increase of saturation substrate current Ibsat after HCI stress...
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