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We have fabricated InGaN-based superluminescent diodes (SLDs) with one-sided oblique facet. The characteristics of the SLDs and laser diodes with the same cavity length (800 μm) were compared. The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 μm cavity length. The characteristics of the SLDs with different...
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