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In article number 1806250, Weiyou Yang, Xinmei Hou, Xiaosheng Fang, and co‐workers report B‐doped SiC nanobelt photodetectors, with a responsivity and external quantum efficiency of 6.37 × 105 A·W−1 and 2.0 × 108% under 405 nm light with 0.14 mW·cm−2 power density at 5 V, respectively. Furthermore, they had a detectivity of 6.86 × 1014 Jones with long‐term stability against 300 °C up to 180 days....
In the present work, high‐performance photodetectors (PDs) based on a single B‐doped 3C‐SiC nanobelt, which are synthesized via catalyst‐free pyrolysis of polymeric precursors of polysilazane, are reported. The as‐built PDs have a high responsivity and external quantum efficiency of 6.37 × 105 A · W−1 and 2.0 × 108% under 405 nm light with a power density of 0.14 mW · cm−2 at 5 V, respectively. The...
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