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In technology of electronic packaging, demands of miniaturization and high-density in electronic systems has sustainably grown. Therefore, it have been required to develop the technology of three dimensional (3D) stacking using through silicon via (TSV) Technology. The TSV technology is an interconnection method by filling an electric conductive material in via hole after via formation. Cu as a filling...
Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200...
A novel technique of vacuum-assisted via filling with molten solder was developed in this study. The diameter of the TSV was 30μm and its depth was 100–200μm. The vacuum pressure applied ranged from 0.02 to 0.08MPa. Molten solder was filled into the via holes by pressure differences between the upper and lower side of Si wafer. The filling time for TSVs with diameter of 30μm and depth of 200μm was...
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