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In article number 1604306, Shibing Long, Ming Liu and co‐workers, review performance improvements in resistive switching devices. The main focus is on filamentary switching behavior, in the aspects of materials modulation, device structure design and switching operation scheme optimization. In particular, 2D nanomaterials that play active roles and exhibit prominent effects in applications are discussed...
Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non‐volatile memory and volatile selector devices with low power consumption and fast switching speeds...
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