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M. Liu and co‐workers present an effective methodology on page 1844 to investigate in real‐time the evolution of growth/dissolution of conductive filaments (CFs) in oxide‐electrolyte resistance random access memory (RRAM). Contrary to common belief, it is found that CF growth begins at the anode (Ag or Cu), rather than having to reach the cathode (Pt) and grow backwards. A modified microscopic mechanism...
Evolution of growth/dissolution conductive filaments (CFs) in oxide‐electrolyte‐based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide‐electrolyte...
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