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Superconducting transition edge sensors (TES) based on a Ti microbridge on Si substrate have demonstrated a very low noise equivalent power. Their effective response time, however, is in the order of microseconds due to relatively high transition temperature (i.e., 300–400 mK) of the Ti microbridge, making it difficult to read out the signal of a large Ti TES array with a SQUID-based multiplexer....
In order to research the influence of cathode module technology on photoemission of transmission-mode GaAs photocathode materials, high resolution X-ray diffraction (HRXRD) instrument was adopted to measure the HRXRD curves of transmission-mode GaAs materials and modules respectively. By comparison of the structures of reflection-mode and transmission-mode GaAs epilayers, both the cathode materials...
We anneal GaN samples in ultra high vacuum system for two times at the same temperature of 710 °C, and activate the sample after each heating by Cs/O. The vacuum level, residual gas, QE, and photocurrents are compared. We find, for the 1st annealing vacuum level line has a shape of “W”, but the 2nd looks like “V”. The residual gases include H2, H2O, N2, and CO2 mainly. Nothing else has been detected...
This paper presents the application of the evaporative cooling technology in the high power rectifier transformer. As the Three Gorges 700MW hydro-generator model needs high-power DC power supply, the evaporative cooling system in three phase bridge non-controlled rectifier is built up. The cooling system of the transformer and the rectifier are connected together. The temperature distribution of...
The experimental research on the plans of solid-filled type and Liquid-filled type mixed medium of a 100 kVA evaporative cooling transformer is done, and test results are compared and analyzed. It is proved that evaporative cooling transformer using mixed medium can not only reduce the cost of transformer, but also improve its economy on the premise of keeping good cooling effect.
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
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