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Epitaxial integration of superconductors with semiconductors is expected to enable new device architectures and to increase electronic circuit and system functionality and performance in diverse fields, including sensing and quantum computing. Herein, radiofrequency plasma molecular‐beam epitaxy is used to epitaxially grow 3–200 nm‐thick metallic NbNx and TaNx thin films on hexagonal SiC substrates...
Superconductors
Integration of superconductors with semiconductors is required for high‐performance electron devices in new quantum, sensing, and systems applications. In article number 1900675, D. Scott Katzer and co‐workers report the fully epitaxial integration of III‐N and GaN HEMT structures on superconducting transition metal nitrides. Image created by Robert Kurcoba using an atomic image provided...
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