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In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing element – suspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure...
As one of the two-dimensional (2-D) transition metal dichalcogenides, atomically thin molybdenum disulfide (MoS2) has attracted significant attention and research interests for micro and nanoelectronic applications. Significant efforts have been made to develop different approaches in order to obtain atomic layer MoS2, such as exfoliation, chemical synthesis, and physical or chemical vapor deposition...
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