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The temperature‐dependent characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and recessed‐gate AlGaN/GaN HEMTs combined with oxygen plasma treatment (rec + oxy HEMTs) are investigated over a range from 25 to 300 °C. The peak transconductance and saturation current of both types of devices decrease with the increase of temperature due to the decline of channel electron mobility...
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