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Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO2)1 − x(Me2O3)x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried...
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