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The FIB Ga + irradiation damage on Si substrate under different ion dose ranging from 10 13 ions·cm −2 to 10 17 ions·cm −2 and its effective recovery were studied. Based on the characterization results of XPS depth profiles, Raman, electron microscopy and AFM, FIB Ga + implantation and the damage’s evolution and recovery after annealing treatment have...
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