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A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3mm...
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