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This letter reports on room-temperature electrical measurements of a Au/Ti- HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high- κ oxide/InP interface...
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