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We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V ldr s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage...
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