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A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n‐, or p‐doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common‐electrostatic force microscopy...
By using tapping‐mode AFM with a biased tip, the type of material (e.g.,metallic, n‐, or p‐type semiconductor) can be distinguished. Taking p‐doping of graphene as an example, Y. Q. Liu, H. J. Gao and co‐workers, on page 7015, observe a series of false apparent heights of graphene flakes when applying a series of different voltages on the tip. However, the heights under negative bias are higher than...
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