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We have developed low temperature formation methods of SiO 2 /Si and SiO 2 /SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68wt% HNO 3 aqueous solutions at 120°C), an ultrathin (i.e., 1.3–1.4nm) SiO 2 layer with a low leakage current density can be formed on Si...
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