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The structural properties, crystalline quality and surface morphology of CdTe thin films without and with a ZnTe buffer layer grown on (001)GaAs by molecular beam epitaxy (MBE) have been studied. CdTe thin film directly prepared on GaAs substrate displays (111) orientation with an island growth mode, whereas the CdTe epilayers with a ZnTe buffer are (001)-oriented single-crystalline film with a two-dimensional...
ZnO films were synthesized on Si(111) substrates by pulsed laser deposition (PLD) under four different growth conditions. The structural and optical properties of the samples were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and photoluminescence (PL) measurement. It is found that when ZnO film is directly prepared on Si, oxygen atmosphere can significantly...
Polycrystalline ZnO thin films were synthesized on Si(111) substrates by pulsed laser deposition (PLD) under oxygen sufficient condition at temperatures ranging from 550 to 700∘C. The results of in situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) show that the (002) orientation of ZnO thin films is deteriorated, but the full-width at half-maximum (FWHM) of (002)...
ZnO/MgO multilayer thin films were fabricated on Si (111) substrates by pulsed laser deposition (PLD) at 600°C for 30min. The oxygen pressure and laser repetition were kept at 20Pa and 5Hz, respectively. The PL measurements suggest that the UV peaks have a blue excursion of 4nm from 379 to 375nm, compared with ZnO films. The XRD analysis indicates that the position of ZnO (002) peaks from ZnO/MgO...
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