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A linear power amplifier (PA) is proposed for EDGE application in cellular and PCS bands, using a standard 0.18 µm CMOS technology. The linear PA is adaptively biased according to its power level to efficiently enhance AM-AM characteristics. Nonlinear gate-drain capacitance (C ) of power transistors, which is one of the major sources of AM-PM nonlinearity, is effectively linearized by adding...
Although Si CMOS PAs for mobile applications have demonstrated specification-compliant performance over the last several years, Si CMOS has not been widely employed in cellular PA applications due to certain inferior properties of its power capability, PAE, and breakdown to its counterparts such as GaAs and SiGe BJTs. However, research conducted in the past decade has enabled commercially available...
A fully integrated power amplifier operating at switching and linear mode is implemented using 0.18-μm CMOS technology. To maximize performance for both operation modes, the fundamental load impedances are optimized with a variable capacitor for GSM and EDGE application. For GSM application, 32 dBm of the output power with 45 % of the drain efficiency is achieved at 1.76 GHz. With EDGE modulation...
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