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A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950°C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023atoms/cm3. BRL consisted...
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