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We report on the formation of thermally stable and low-resistance Ti/Au-based ohmic contacts to n-type GaN (4.0 × 1018 cm−3) by using a W barrier layer. It is shown that the electrical characteristic of the sample is considerably improved upon annealing at 900 °C for 1 min in a N2 ambient. The contacts produce the specific contact resistance as low as 6.7 × 10−6 Ω cm2 after annealing. The Norde and...
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