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A novel selective atomic layer deposition (ALD) process for depositing MoS2 using MoCl5 and H2S precursors is proposed. On the surface of SiO2, the prolonged introduction of MoCl5 vapor by increasing the MoCl5 pulsing time rapidly suppresses the subsequent MoS2 growth due to the intense self‐etching effect of MoCl5, that is, the detachment of weakly bonded surface adsorbates (MoClx*). In contrast,...
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