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Highly preferred orientation 3C-SiC films were deposited on Si (111) substrates by a modified two-step carbonization method. The crystal quality of SiC films were examined by XRD. To evaluate the effect of the introducing of silane during carbonization, cross-sectional SEM was carried out. Results indicated that the introducing of silane during carbonization is effective to prevent the out-diffusion...
Hetero-junctions have been fabricated on Al-doped silicon carbide thin films onto n-type silicon single crystals using low-pressure chemical vapor deposition method. Temperature-dependent current–voltage measurements and Hall-effect measurements have been performed to determine the electrical properties of the structures. The temperature-dependent I–V characteristics demonstrated that the forward...
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