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Two kinds of Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs were electrically measured at 300K and at 77K and compared. Both the devices, Ultra-Thin Body (UTB) and Nano Scale Body (NSB), are sharing the same W/L ratio but are having a channel thickness of 46 nm and 2.2 nm respectively. For both the temperatures, the devices' respective linear transfer characteristics were found to be surprisingly...
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