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The triple-targets magnetron co-sputtering system with three targets of InO, GaO , and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The InO RF power of 50 W, GaO RF power of 25 W and Zn DC power of 10 W were independently tuned to...
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