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The nanorods with the structure of n-ZnO/i-ZnO were deposited on the p-GaN layer using a vapor cooling condensation system. By using a conductive atomic force microscopy system, the rectifying diode-like behavior was observed from the single n-i-p heterostructural nanorod photodetectors. The associated dark leakage current measured from the single nanorod photodetectors operating at a reverse bias...
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