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The radiation response of single-junction InGaP, GaAs and InGaAs cells with different indium content (20 and 30%), which are component subcells of inverted metamorphic triple-junction (IMM3J) solar cells, were prepared and irradiated with 10 MeV protons and 1 MeV electrons. Degradation characteristics, such as the change in the LIV, DIV, and EQE of the four types of cells were compared and analyzed,...
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