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We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH4 and SnCl4. The lasing threshold of 68 KW/cm2 at 10K and maximum laser operating temperature of 110 K was achieved.
SiGeSn/GeSn/SiGeSn quantum well was grown on Ge buffered Si substrate via chemical vapor deposition. Photoluminescence spectra were obtained using three excitation lasers, which could in-depth probe the optical transition characteristics of the quantum well.
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
A Ge0.95Sn0.05/Ge0.9Sn0.1/Ge0.95Sn0.05 single quantum well was grown on Si via chemical vapor deposition. Temperature-dependent Photoluminescence shows the emission peak from the GeSn well. The studied structure aims for group-IV based efficient light source on Si.
Characterizations of Ge/Ge0.9Sn0.1/Ge double heterostructure light-emitting diodes have been performed at the temperatures from 300 to 77K. The electroluminescence emission from the direct bandgap transition has been observed and systematically investigated.
Silicon-germanium-tin films were grown by an Epsilon® RPCVD single wafer CVD deposition system to be used as an intermediate cell in high efficiency multi-junction solar cells. Material and optical characterization of the samples are performed using transmission electron microscopy, X-ray diffraction, Rutherford backscattering, Raman spectroscopy, photoluminescence, and eillpsometry techniques. Thicknesses,...
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