The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A complete nonlinear characterization and modeling flow for modern GaN transistors is presented. Features include a new active-source injection based waveform measurement HW/SW system built around an NVNA, an extended artificial neural network (ANN) training infrastructure for coupled electro-thermal and trap-dependent model constitutive relations, and the native implementation in a commercial simulator...
Extensive results are presented validating a recently enhanced large signal FET model, DynaFET, applied to an advanced 6x75um periphery, 0.5um gate-length GaN HFET transistor, manufactured by RFMD. Excellent results are achieved for DC (including leakage current), S-parameters versus frequency and temperature, harmonic and intermodulation distortion, as well as load-pull figures of merit, over a very...
A non-quasi static large-signal FET model is presented incorporating self-heating and other multiple timescale dynamics necessary to describe the large-signal behavior of III-V FET technologies including GaAs and GaN. The model is unique in that it incorporates electro-thermal and trapping dynamics (gate lag and drain lag) into both the model current source and the model nonlinear output charge source,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.