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Text recognition in natural scene image is an important yet challenging problem by its irregular nature. A novel method based on random projection and deep neural network(DNN) is proposed in this article. Firstly the word image is converted to multi-layers' convolutional neural network(CNN) feature sequence with sliding window. Then random projection(RP) is used to embed the original high-dimensional...
This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests...
With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics...
An area-efficient 60-GHz wake-up receiver (WuRx) using reconfiguration techniques of multistage low-noise amplifiers (LNAs) is presented. The gain stages of the 60-GHz LNA are reused as the envelope detectors for the wake-up receiver. Therefore, the bulky components such as extra switches between the wake-up receiver and the LNA, additional antennas, and excess input matching network can be removed...
This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing system, which aims for short circuit testing of high-power IGBT modules. An ultra-low stray inductance of 37 nH is achieved in the implementation of the tester. An 100 MHz FPGA supervising unit enables 10 ns level control accuracy of the short-circuit duration, protection triggering, and acquisition of the electrical...
This paper describes an active voltage control for IGBT connected in series. The gate drive circuit not only amplifies the control signal, but also control the IGBT's dv/dt and over voltage during switching transient. This make the switching performance less dependent on IGBT itself. This paper provides a stability analysis to judge the controller stability. The experiment results show the IGBT voltage...
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