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In this paper, the selective growth of silicon nanowires (SiNWs) was studied. With the aid of photolithography, the vertically aligned silicon nanowires were selectively formed on the patterned substrates via an electroless metal deposition (EMD) method under normal conditions (room temperature, 1atm). Low-pressure chemical vapor deposition (LPCVD) silicon nitride was used as the masking layer for...
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