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Different from researches in two-terminal nanoscale graphene structures, the negative differential resistance (NDR) phenomenon in graphene nanoribbon superlattice (GNSL) field-effect transistors (FETs) is studied in this reported work. Numerical analyses of two types of GNSL FETs with different gate voltages reveal that NDR occurs in some ‘Z’-type GNSL FETs under some gate voltages, which develops...
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