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This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content,...
A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
A compact model for tunneling field-effect-transistors (TFETs) is presented. The model includes a band-to-band tunneling (BTBT) current module and a terminal charge module. TCAD simulations show that the model describes TFETs currents and capacitances accurately. The model is implemented into a circuit simulator and used to simulate TFETs logic circuits and SRAMs. Unique features in TEFTs including...
In the design of scaling complementary metal-oxide-semiconductor (CMOS), back-end-of-the-line (BEOL) interconnection becomes a limiting factor to circuit performance. Compact models for paratactic capacitance, which are scalable with wire geometries, are desired for circuit simulation and design. Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes...
A high linear double-gate (DG) MOSFET application to RF mixer is proposed based on derivative superposition method which was successfully used in Bulk CMOS region. By independently biasing front and back gate voltage of DG MOSFET, one DG MOSFET device is reviewed as two parallel devices. In this way, we realize the derivative superposition method application in the DG MOSFET linearity analysis and...
This paper presents a carrier-based analytic model for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson-Boltzmann equation by a carrier approach and the current continuity equation with the back interface oxide layer effect. The mode is valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them...
A complete carrier-based non-charge-sheet analytic theory for the nano-scale undoped surrounding-gate MOSFETs is presented in this paper based on the basic device physics. The formulation is based on the Poisson's equation to solve directly for the mobile carrier-the electron concentration. Therefore, the distribution of the potential, the field and the charge density in the channel away from the...
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