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In this article, a defected ground structure (DGS) is proposed to replace the inductor placed between common source and common gate stage in cascode low‐noise amplifier (LNA), leading to silicon area reducing as well as good internal matching condition. For verification, a 28 GHz three‐stage cascode LNA with DGS is designed and implemented in a 130‐nm CMOS technology. The fabricated prototype achieves...
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