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High‐quality Bi2Te3 films can be grown on Si by the state‐of‐art molecular beam epitaxy technique. In situ ARPES measurement reveals that the as‐grown films are intrinsic topological insulators and the single‐Dirac‐cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well‐developed Si technology.
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