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For the first time, we propose a stackable vertical Channel‐All‐Around (CAA) IGZO FETs. The device is fabricated in a BEOL‐compatible process flow where the channel and gate stack is deposited by Plasma‐Enhanced Atomic Layer Deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device electrical performance are studied. An optimized 50nm‐channel‐length CAA IGZO FET achieved Ion...
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